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SIS1-System
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Unit
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t253EM
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t285EM
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s285
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s249
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p18
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p1010
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p3020
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m30oe
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m30bi
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m4720bi
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m4720ai
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Datasheet:
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PDF(175K)
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PDF (175K)
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PDF (373K)
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in Arbeit
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PDF (378K)
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PDF (378K)
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PDF (384K)
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PDF(319K)
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PDF(320K)
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PDF (402K)
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PDF (400K) |
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CCD Image Sensor
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TI253
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TI285
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ICX285AL
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ICX249AL
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FT18
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FTT1010
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FTF3020M
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CCD30-11
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CCD30-11
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CCD47-20bi
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CCD47-20ai
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CCD Sensor Type
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FT
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FT
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IT
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IT
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FT
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FT
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FF
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FF
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FF
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FT
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FT
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CCD Manufacturer
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TI
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TI
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Sony
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Sony
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Philips
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Philips
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Philips
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E2V
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E2V
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E2V
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E2V
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Pixel Size
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µm
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7.4 x 7.4
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8 x 8
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6.45 x 6.45
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8.6 x 16.6
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7.5 x 7.5
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<12 x 12
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12 x 12
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26 x 26
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26 x 26
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13 x 13
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13 x 13
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Active Area, H x V
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mm
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4.8 x 3,67
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8 x 8
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9 x 6.7
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6.4 x 4.8
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7.7 x 7.7
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12.3 x 12.3
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36.9 x 24.6
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26.6 x 6.7
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26.6 x 6.7
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13.3 x 13.3
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13.3 x 13.3 |
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Image Diagonal
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mm
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6.1
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11.35
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11.2
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8.1
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10.9
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17.4
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44.34
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27.43
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27.43
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18.82
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18.82
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Aspect Ratio, width : height
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4 : 3
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1 : 1
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4 : 3
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4 : 3
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1 : 1
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1 : 1
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3 : 2
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4 : 1
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4 : 1
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1 : 1
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1 : 1
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Pixelnumber, col. x lines
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656x496
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1004x1002
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1392x1040
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752x290
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1024x1024
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1024x1024
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3072x2048
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1024x256
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1024x1024
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1024x1024
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Pixelnumber, Interlace Mode
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1024x2048
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1024x2048
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3072x4096
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1024x2048
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1024x2048
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Full
Well Capacity, pixel |
e-
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44 000
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40 000
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18 000
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30 000
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120 000
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650 000
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650 000
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300 000
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500 000
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100 000
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100 000
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Read-out Noise, rms
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e-
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0.5 / 25
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0.5 / 20
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2.5
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4.5
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4
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12
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12
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7
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7
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8
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8
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Dynamic
Range |
d
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1,700 : 1
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2,000 : 1
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7,200 : 1
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6,700 : 1
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30,000 : 1
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54,000 : 1
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54,000 : 1
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43,000 : 1
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55,000 : 1
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12,500 : 1
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12,500 : 1
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Dark
Current, pixel, 15°C |
e-
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3.5
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4
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2
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9
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85
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40
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40
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140
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550
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140
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55
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FW / Dark Current, 25°C
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s
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12.570
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10.000
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9 000
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3 300
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1 410
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11 000
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16 000
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2 140
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910
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714
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1 818
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Quantum
Efficiency, QE |
%
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40
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67
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65
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71
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32
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32
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32
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53
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85
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92
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45
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Sensitivity, photons SNR=1 |
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1.25
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0.75
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3.6
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7.7
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12.5
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37.5
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37.5
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13.2
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10.5
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8.7
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17,8
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Total
Electron Capacity, TEC |
109e
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14.3
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40.2
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25
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6.6
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125
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680
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4 090
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78
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130
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105
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25
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Total
Noise Electrons, TNC |
106e-
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0.2
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0.5
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2.9
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1.5
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4.2
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12.5
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75
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1.8
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2.3
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8.4
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2.9
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Binning |
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hor., vert.
|
hor., vert.
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hor., vert.
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hor., vert.
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hor., vert.
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hor., vert.
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hor., vert.
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hor., vert.
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hor., vert.
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hor., vert.
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hor., vert.
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Anti-Blooming x FWC |
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>200
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>200
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>200
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>200
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>200
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>200
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>200
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1
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1
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-
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1
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Frame Rate: 1MHz(18bit)/ 3MHz(14bit)/ 6MHz(14bit) |
Hz
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-/ 8.7/ 17.5
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-/ 2.3/ 5.5
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-/ 2/ 4
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-/ 12/ 24
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0.9/ 2.7/ 5.4
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0.9/ 2.7/ 5.4
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0.15/ 0.4/ 0.8
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3.5/ 10/ 20
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3.5/ 10/ 20
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0.9/ 2.7/ -
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0.9/ 2.7/ -
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Options
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Framing 4 MHz |
Framing 1 MHz |
Framing 0.3 MHz color |
color |
Framing 0.8 MHz fiberoptic |
Framing 0.8 MHz fiberoptic |
color |
fiberoptic |
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Price,
standard
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€
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8,900
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13,900
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7,900
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7,200
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9,900
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12,800
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15,900
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13,500
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17,900
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17,900
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15,900
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Price, description of standard configurations:
The SIS System contains the complete peltier
cooled CCD camera - including A/D Interface, cabling and our image
processing software WinSIS 6 extended.
If you order optional a computer,
you get the system delivered completely configurated and it will be
ready for use. That means of course that all components are
perfectly balanced and you will get the best possible system
performance.
Tell us
your specific requirements - feel free to
contact us and we will make you a customized offer.
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References:
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The Max-Planck-Institut for Plasmaphysik (IPP) uses some of
our CCD camera systems for scientific experiments. In particular we
are very proud that they use them at the fusion experiment ASDEX Upgrade. For this confidence we want to say thank you.
Please inform yourself about ASDEX by clicking on the logo
on the left side.
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In southern Spain DLR maintains the permanent division
Plataforma Solar. It is used for solar research. They also
use our CCD camera systems
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The
"Max-Planck-Institute of Quantum Optics" in Garching and the
"Institut
für Angewandte Physik" of the Rheinische Friedrich-
Wilhelms-Universität Bonn use our CCD cameras for the
analysis of the Bose Einstein Condensation. The following
links are showing a nice explanation. Most of the images are
made with our ccd camera .
(excluding www.colorado.edu)
http://www.iap.uni-bonn.de/P2K/bec/index.html
(GERMAN)
http://www.colorado.edu/physics/2000/bec/index.html
(the same site in English)
http://www.mpq.mpg.de/qdynamics/projects/bec/index.html
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Glossary - Properties
of a CCD Camera
for a more
graphic description, please open the Glossar (PDF 124KB)
For additional questions about
our ccd camera system:
E-Mail:
info@theta-system.de
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Quantum
Efficiency, QE, of a CCD sensor |
The quantum efficiency QE is defined as the percentage of
the generated electronic charges by the incoming photons.
This efficiency of the CCD image sensor is determined by
material properties, production and its design structure.
The diagram in the
PDF Glossary shows the wavelength dependence of the quantum
efficiency of selected CCD image sensors to provide some
help the selection different applications. Open-electrode
CCDs can be selected for improving the QE in the UV region
due to the absorption of the polysilicon gates, back
illuminated CCD sensors with different wavelength optimised
antireflection coatings or front illuminated. Depending on
the application and the available light intensity it is a
good benchmark to choose the right CCD camera.
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Light
Sensitivity of a CCD Sensors |
The light sensitivity S is the measure of a CCD image sensor’s sensitivity.
It is defined as the number of photons which are necessary to generate a signal
that corresponds to a signal to noise ratio of SNR=1. Particularly at low light
intensities you should choose a CCD image sensor with high sensitivity.
The light sensitivity is defined as the ratio of SNR and the quantum efficiency QE:
S = SNR/QE
The diagram in the
PDF Glossary shows sensitivity independence of the wavelength for
the Scientific Imaging Systems SIS equipped with different CCD image sensors.
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Dark Current of
a CCD Sensors |
The dark current of a CCD image sensor is an important factor for sensitivity.
It results from the temperature-depending thermal generation of electrons.
The nearly exponential behaviour of this dependence can roughly be calculated
as a doubling of the dark current with every 6°C to 9°C temperature rise.
The dark electrons added to the electrons generated by photons and their statistical
dark noise contributes to the total noise.
The dark signals are not spread regularly over the pixel array but vary due to inhomogeneities
during the sensor production process. The structure of the resulting dark image is called “fixed pattern noise”.
Moreover there are sometimes even some “hot pixel” that have a far greater dark signal than the average CCD sensor.
The fixed pattern noise and the hot pixel can be corrected by subtracting the dark image from the measuring image.
For minimizing the dark current, every our CCD camera is peltier cooled by default.
Please have a look at the diagram in the PDF Glossary.
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Full
Well Capacity, FWC, of a CCD Sensor |
The full well capacity FWC is the maximum number of electrons which one pixel can contain before its saturation.
The FWC depends mainly on the size of the pixel, the kind of CCD image sensor and its operating characteristics.
In ordinary CCD devices, electrons over the saturation charge flow to the adjacent pixel with a resulting effect
called blooming which influences the qualitative and quantitative imaging performance.
CCD camera systems with anti-blooming image sensors drain these overexposed electrons to special structures with an
efficiency factor of 200 to 1000 above the full well capacity. This is very important for the measurement of very
low intensities near high intensity regions. These structures take up space on the CCD image sensor and thereby
lower the quantum efficiency QE and/or the fill factor of the sensor.
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Total Electron Capacity, TEC, of a CCD Sensor |
The total electron capacity TEC of a CCD image sensor is the
product of the full well capacity FWC and the total number
of pixel. TEC is a good measure for the comparison of
different CCD image sensors in consideration of the total
noise electrons TNE. The total dynamic TD of a CCD camera
system is the ratio TD = TEC/TNE.
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Total Noise Electrons, TNE, of a CCD Sensor |
The total noise electrons TNE of a CCD image sensor is the product of the signal to noise ratio SNR and the total number of pixel.
In connection with the total electron capacity TEC the total dynamic TD = TEC/TNE of the CCD camera system will be received.
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Fill Factor of a
CCD Sensor |
The fill factor is the active pixel area for the conversion of incoming photons. CCD image sensors with a fill factor
of less than 100% show moiré structures due to the spatial sampling characteristics.
This behaviour influences the modulation transfer function and prevents the quantitative analysis of image intensities.
In addition, the quantum efficiency will be decreased.
This effect can be reduced by the “lens-on-chip” technology: Every pixel has its own lens, but with a resulting
disadvantage of a direction-dependent sensitivity.
The quantum efficiency decreases with the increase of the angle of incoming photons, even for values smaller than 2.8
or numerical apertures higher than of the optical systems. This is, especially in the low light level region,
an important limiting factor for absolute sensitivity.
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Linearity of a CCD
Sensor |
A very important characteristic of a CCD imaging system for photometric applications is its linearity.
The digital signal should be proportional to the number of incoming photons. The linearity can be defined
as the percentage of the deviation of a linear plot compared to the maximum intensity value.
Lin (%) = (deviation x 100)
max.signal
The linearity depends on the CCD image sensor itself, the signal processing electronics and the A/D converter.
A typical linearity plot is shown in the diagram on the left side.
Our CCD camera systems have nonlinearities in the range of a few tenths of a percent.
Because the nonlinearity is nearly constant for a CCD, it can be improved down to values less than one-tenth of
a percent with lookup tables. Because of that, a fast correction is possible and the quality of the CCD camera
system can be raised regarding to the linearity.
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Dynamic Range
of a CCD Sensor |
The dynamic range of a CCD camera system is the relation of the full
well capacity FWC to the signal to noise ratio SNR. This
important characteristic of CCD camera performance specifies
the ability to measure very dim and very bright parts and
therefore the intensity range of a single image.
THETA SYSTEM uses 14-bit A/D converters with 3MHz and 10MHz conversion
speeds and 18-bit (16-bit used) A/D converters with 1MHz
conversion speed. This high digitalization dynamic avoids
the need to implement different detection modes for high,
medium and low light levels to optimise the system to the
application. Especially in the case of signal averaging over
many images, the high digitalisation dynamic extends the
total dynamic range up to 19-bit with the 18-bit system and
15-bit with the 14-bit system, compared to a maximum of
13-bit with a 12-bit system.
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Signal to noise ratio, SNR, of a CCD Sensor |
The signal to noise ratio SNR depends on:
► the natural photon statistics √Is of the incoming photons Is
► the dark noise √ID
► the read-out noise A, resulting from the CCD sensor and processing electronics.
SNR = Is / SqR(Is + ID + A²).
The diagram in the
PDF Glossary provides the typical SNR of CCD camera systems
with the shown CCD image sensors and their full well capacity. In the region of higher intensities,
e.g. in case of photometric studies, absorption + beamprofile measurements and microscopic applications,
a CCD sensor with high full well capacity should be chosen, because the SNR depends mainly on the photon
statistics at intensities higher than a few percent. The dark noise and the read-out noise dominate in
applications with low intensities, e.g. fluorescence, and the light sensitivity S is the selection of choice.
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Binning of a CCD
Sensor |
Binning is the combination of intensities of adjacent pixels
into an image with a resulting lower spatial resolution.
Hardware binning is the addition of generated electronic
charges of several pixel directly on the CCD chip during the
readout. These combined charges will be read only one time
from the sensor output stage with the resulting lower
read-out noise corresponding to the binned pixel number.
Hardware binning is therefore convenient for low intensities
when the reduced spatial resolution can be tolerated. It is
very important to take care of the maximum electron capacity
in the readout register and the output stage due to blooming
effects. Software binning is the addition of adjacent pixel
intensities in the image memory after the image acquisition.
The summarization increases the number of electrons of one
image element and therefore the signal to noise ratio SNR
corresponding to the square root of the number of binned
pixels. Hardware binning of sensor lines lowers the read-out
time and therefore speeds up the frame rate. Intelligent
combination of the hard- and software binning factors
results in a good compromise between spatial and time
resolution for image capturing of time-dependent image
sequences.
After illumination of the single pixel with the relative
intensity of 1, the charges of all lines will be transferred
with the line shift 1 one step towards the output register.
The charges of the lowest line are now inside the output
register and the uppermost line contains no charges. In a
similar way the line shift 2 happens, and the charges of the
lowest line will be added to the charges in the output
register. Simultaneously the transfer processes occurs with
the column shift 1 and column shift 2 into the output stage.
The resulting intensity of 4 will be read out of the output
stage by the camera electronics and with the following reset
the system is ready for the next cycle.
Please have a look at the diagram at the
PDF Glossary.
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For additional questions about
our ccd camera system:
E-Mail: info@theta-system.de |
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